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TitoloData di pubblicazioneAutore(i)RivistaEditore
Raman spectra of CuGaS2-x Sex (x= 0, 0.5, 1.0)1983A Anedda; Bongiovanni G; F Raga; E Fortin; M QuinteroNUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. D CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS
Coordination of rhodium (III) in dilute aqueous solutions in presence of chloride anion1985R Caminiti; D Atzei; P Cucca; F Squintu; G BongiovanniZEITSCHRIFT FÜR NATURFORSCHUNG. TEIL A, PHYSIK, PHYSIKALISCHE CHEMIE, KOSMOPHYSIK
Structure of rhodium(III) nitrate aqueous solutions. An investigation by X-ray diffraction and Raman spectroscopy1986Caminiti R; Atzei D; Cucca P; Anedda A; Bongiovanni GTHE JOURNAL OF PHYSICAL CHEMISTRY
Anharmonic mixing between two phonons in red mercury iodide1988Anedda A; Bongiovanni GPHYSICAL REVIEW. B, CONDENSED MATTER
Many-body effects in the electron-hole plasma confined in GaAs-(GaAl)As quantum wells1988Bongiovanni G; Staehli JL; Martin DPHYSICA STATUS SOLIDI B-BASIC RESEARCH
Raman Scattering from Vibrational Modes in Layered CdxHg1–xI2 Solid Solution1988Anedda A; Bongiovanni G; Fortin EPHYSICA STATUS SOLIDI B-BASIC RESEARCH
Properties of the electron-hole plasma in GaAs-(Ga,Al)As quantum wells: The influence of the finite well width1989Bongiovanni G; Staehli J.LPHYSICAL REVIEW. B, CONDENSED MATTER
The influence of temperature on the single-particle self-energy in a quasi two dimensional electron-hole plasma1990Bongiovanni G; Staehli J.; Bosio CSUPERLATTICES AND MICROSTRUCTURES
Linewidth behavior of the A1g Raman phonon in CdxHg1-xI2 solid solution1990Anedda A; Bongiovanni GPHYSICAL REVIEW. B, CONDENSED MATTER
Subband Renormalization In The Presence Of A Dense Electron-Hole Plasma In A Quantum-Well1991Bongiovanni G; Staehli JlSOLID STATE COMMUNICATIONS
On The Intersubband Interactions In An Electron-Hole Plasma Confined In A Quantum-Well1991Bongiovanni G; Staehli Jl; Bosacchi A; Franchi SSUPERLATTICES AND MICROSTRUCTURES
Density Dependence Of Electron-Hole Plasma Lifetime In Semiconductor Quantum-Wells1992Bongiovanni G; Staehli JlPHYSICAL REVIEW. B, CONDENSED MATTER
Spontaneous Emission Of Highly Excited GaAs/(Ga,Al)As Quantum-Wells1992Bongiovanni G; Staehli JlSOLID STATE COMMUNICATIONS
Electron-Hole Plasma Decay Time In GaAs/(Ga, Al)As Quantum-Wells1992Bongiovanni G; Staehli JlPHYSICA STATUS SOLIDI B-BASIC RESEARCH
Differential Photoluminescence Excitation Spectroscopy - A Novel And Sensitive Tool To Probe Gain And Absorption In Semiconductor Nanostructures1992Bongiovanni G; Mura A; Staehli JlPHYSICA STATUS SOLIDI B-BASIC RESEARCH
A 1.9 eV photouminescence induced by 4 eV photons in high-purity wet synthetic silica1993Anedda A; Bongiovanni G; Cannas M; Congiu F; Mura A; Martini MJOURNAL OF APPLIED PHYSICS
Photon And Carrier Density Profiles In A Semiconductor Optical Amplifier1993Butty J; Bongiovanni G; Staehli JlSOLID STATE COMMUNICATIONS
Optical Amplification And Its Saturation In Semiconductor Quantum-Wells1993Butty J; Bongiovanni G; Staehli JlJOURNAL DE PHYSIQUE IV
4-Wave-Mixing Signals From Extended Exciton-States Above The Mobility Edge In Gaas (Ga,Al)As Multiple-Quantum Wells1994Bongiovanni G; Mura A; Staehli JlSUPERLATTICES AND MICROSTRUCTURES
Optical Amplification And Its Saturation In Semiconductor Quantum-Wells1995Bongiovanni G; Butty J; Staehli JlOPTICAL ENGINEERING
   
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