Prodotti della ricerca
| Titolo: | Anomalous energetics and defect-assisted diffusion of Ga in silicon |
| Autori: | |
| Data di pubblicazione: | 2004 |
| Rivista: | |
| Abstract: | We study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial Ga-T. Thus in the presence of self-interstitials Ga becomes interstitial, and is electrically deactivated as an acceptor. Studying the native-defect assisted diffusion, we find a self-interstitial-assisted mechanism to be favored; vacancy-assisted diffusion has a sizably larger activation energy, in agreement with the observed transient enhanced diffusion behavior. (C) 2004 American Institute of Physics. |
| Handle: | http://hdl.handle.net/11584/108745 |
| Tipologia: | 1.1 Articolo in rivista |
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