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IRIS è il sistema di gestione integrata dei dati della ricerca (persone, progetti, pubblicazioni, attività) adottato dall'Università degli Studi di Cagliari dal mese di luglio 2015.

Mostra risultati da 1 a 20 di 44
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TitoloData di pubblicazioneAutore(i)RivistaEditore
Further improvements of an extended Hakki-Paoli method2018Vanzi, M.; Mura, G.; Martines, G.MICROELECTRONICS RELIABILITY
Clamp voltage and ideality factor in laser diodes2015Vanzi, M.; Mura, G.; Marcello, G.; Martines, G.MICROELECTRONICS RELIABILITY
Ultra-low voltage, self-aligned OTFTs for frequency applications2013Lai S; Cosseddu P; Gazzadi G C; Martines G; Bonfiglio A; Barbaro MMATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGSMaterials Research Society
External cavity ITLA degradation2012MURA G; M.Vanzi; G.Martines; T.Tomasi; R.Cao; M.Marongiu
DC parameters for laser diodes from experimental curves2011Vanzi M; Mura G; Martines GMICROELECTRONICS RELIABILITYElsevier
A novel approach to determine the start-up conditions in microwave negative impedance oscillator design2007MONNI M; MARTINES GHorizon House Publications Ltd
An automated lifetest equipment for optical emitters2002GIGLIO M; MARTINES G; MURA G; PODDA S; VANZI MMICROELECTRONICS RELIABILITY
A global approach to the noise and small-signal characterization of microwave field-effect transistors2001CADDEMI A; MARTINES GWorld Scientific
A simpler method for life-testing laser diodes1999VANZI M; MARTINES G; BONFIGLIO A; LICHERI M; DARCO R; SALMINI G; DE PALO RMICROELECTRONICS RELIABILITYElsevier science
DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime1998MENEGHESSO G; PACCAGNELLA A; MARTINES G; GARAT F; CROSATO C; ZANONI E
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT submitted to accelerated life tests1998G. MENGHESSO; G. CROSATO; C. GARAT; MARTINES G; G. PACCAGNELLA; E. ZANONIMICROELECTRONICS RELIABILITY
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT’s submitted to accelerated life tests1998MENEGHESSO G; CROSATO C; GARAT F; MARTINES G; PACCAGNELLA A; ZANONI E
Charge diffusion and reciprocity theorems: A direct approach to EBIC of ridge laser diodes1996F.MAGISTRALI; G.SALMINI; G.MARTINES; VANZI MMaterials Park
Noisy characterization for CAD-oriented modeling of a pseudomorphic HEMT series versus frequency and temperature1996A. CADDEMI; MARTINES G; M. SANNINOResearch Signpost
Proposal of up-to-date standards on methods of measuring noise in linear two-ports1994MARTINES G; SANNINO M
The determination of noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test-set1994MARTINES G; M. SANNINOIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
CAD-oriented modeling of pseudomorphic HEMTs from simultaneous noise and scattering measurements1993CADDEMI A; GAMBINO G; LIO M; MARTINES G; SANNINO M
Full characterization of low-noise HEMTs using only noise figure measurements1993CADDEMI A; MARTINES G; SANNINO M
Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements1993CADDEMI A; MARTINES G; SANNINO MCornell University
CAD-oriented HEMT models from noise and scattering measurements1992CADDEMI A; MARTINES G; SANNINO M
   
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